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savantic semiconductor product specification silicon npn power transistors 2N3447 description with to-3 package excellent safe operating area applications designed for medium-switching and amplifier applications. pinning pin description 1 base 2 emitter 3 collector absolute maximum ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 80 v v ceo collector-emitter voltage open base 60 v v ebo emitter-base voltage open collector 7 v i c collector current 7.5 a p c collector power dissipation t c =25 115 w t j junction temperature 150 t stg storage temperature -65~200 thermal characteristics symbol parameter value unit r (th) jc thermal resistance junction to case 1.17 /w fig.1 simplified outline (to-3) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2N3447 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =30ma ;i b =0 60 v v ce(sat)-1 collector-emitter saturation voltage i c =5a; i b =0.5a 1.5 v v ce(sat)-2 collector-emitter saturation voltage i c =7a;i b =1.5a 3.0 v v b e(on) base-emitter on voltage i c =5a ; v ce =5v 1.5 v i ceo collector cut-off current v ce =60v; i b =0 0.7 ma i cbo collector cut-off current v cb =80v; i e =0 0.1 ma i ebo emitter cut-off current v eb =7v; i c =0 0.1 ma h fe dc current gain i c =5a ; v ce =5v 40 120
savantic semiconductor product specification 3 silicon npn power transistors 2N3447 package outline fig.2 outline dimensions (unindicated tolerance:0.1mm)

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